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C5516 Datasheet 2SC5516

Manufacturer: Panasonic

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Overview

Power Transistors www.DataSheet4U.com 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 30 20 8 70 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.

Key Features

  • φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:.

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