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Panasonic Electronic Components Datasheet

FC8V33030L Datasheet

Dual N-channel MOSFET

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FC8V33030L
Dual N-channel MOSFET
For DC-DC Converter
FC8V33030L
Unit: mm
„ Features
y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 V)
y High-speed switching :Qg = 3.8 nC
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
„ Marking Symbol:6A
„ Basic Part Number
Dual Nch MOS 33 V (Individual)
„ Packaging
FC8V33030L Embossed type (Thermo-compression sealing):
3 000 pcs / reel (standard)
„ Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Drain-source Voltage
VDS
33
Gate-source Voltage
FET1
FET2
Drain Current (Steady State) *1
Drain Current (t=10s) *1
Drain Current (Pulsed) *1,2
Source Current (Pulsed)
(Body Diode) *1,2
Power Dissipation (Steady State) *1
Overall
Power Dissipation (t=10s)
Channel Temperature
*1
VGS
ID
IDp
ISp
(BD)
PD
Tch
±20
6.5
8
26
6.5
1
1.5
150
Storage Temperature Range
Tstg -55 to +150
Note: *1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150 °C.
Unit
V
V
A
W
°C
°C
1. Source(FET1)
2. Gate(FET1)
3. Source(FET2)
4. Gate(FET2)
5. Drain(FET2)
6. Drain(FET2)
7. Drain(FET1)
8. Drain(FET1)
Panasonic
JEITA
Code
WMini8-F1
SC-115
Internal Connection
FET1
18
27
FET2
36
45
Pin name
1. Source(FET1) 5. Drain(FET2)
2. Gate(FET1)
6. Drain(FET2)
3. Source(FET2) 7. Drain(FET1)
4. Gate(FET2)
8. Drain(FET1)
FR-4 (Unit: mm)
25.4 x 25.4 x 0.8
Publication date: October 2012
Ver. BED
(Figure 1) Glass-Epoxy Board
1


Panasonic Electronic Components Datasheet

FC8V33030L Datasheet

Dual N-channel MOSFET

No Preview Available !

FC8V33030L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Static Characteristics
Parameter
Symbol
Conditions
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 33 V, VGS = 0 V
Gate-source Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
Gate-source Threshold Voltage
Vth ID = 0.48 mA, VDS = 10 V
Drain-source On-state Resistance *1
RDS(on)1 ID = 3.3 A, VGS = 10 V
RDS(on)2 ID = 3.3 A, VGS = 4.5 V
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 3.3 A (Figure 2)
VDD = 15 V, VGS = 10 to 0 V
ID = 3.3 A (Figure 2)
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 6.5 A
Body Diode Characteristic
Diode Forward Voltage *1
VSD IS = 3.3 A, VGS = 0 V
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
Min.
33
1
Typ.
15
22
Max.
10
±10
2.5
20
35
Unit
V
μA
μA
V
mΩ
360
70 pF
50
8
3
24
ns
9
3.8
1.4 nC
1.6
0.8 1.2
V
Ver. BED
2


Part Number FC8V33030L
Description Dual N-channel MOSFET
Maker Panasonic
Total Page 7 Pages
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