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Rectifier Diodes
MA2J114 (MA114)
Silicon epitaxial planar type
For small power rectification I Features
• Small S-mini type package, allowing high-density mounting • High reverse voltage VR
1.25±0.1 0.35±0.1 0.7±0.1
Unit : mm
1 0 to 0.1
1.7±0.1
0.16+0.1 –0.06 5°
Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s
Symbol VR VRM IO IFRM IFSM Tj Tstg
Rating 150 150 200 600
Unit V
(0.15) 0 to 0.1
V mA mA
1 150 −55 to +150
A
1: Anode 2: Cathode SMini2-F1 Package
Marking Symbol: 1E
°C °C
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Symbol IR VF Ct VR = 150 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.