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MTM232230LBF - Silicon N-channel MOS FET

Key Features

  • s.
  • Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V).
  • Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant).
  • Marking Symbol :BK.
  • Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 C Drain-source Voltage Gate-source Voltage VDS VGS 20 10 V Drain current ID 4.5 A Peak drain current.
  • 1 Power dissipation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DReovcisNioon. . T3 T4-EA-12901 MTM232230LBF Silicon N-channel MOS FET For switching  Features  Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V)  Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)  Marking Symbol :BK  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Drain-source Voltage Gate-source Voltage VDS VGS 20 10 V Drain current ID 4.