Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–50
–50
–5
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AL
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
– 0.1 µA
–100 µA
–50 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = –1mA, IB = 0
IE = –10µA, IC = 0
–50
–5
V
V
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
200 500
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1 – 0.3
V
Transition frequency
fT VCB = –10V, IE = 2mA, f = 200MHz 250 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
1.5 pF
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
1
