2SA1858 Datasheet - Panasonic Semiconductor

2SA1858 Silicon PNP epitaxial planer type Transistor

Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification 5.0±0.2 4.0±0.2 Unit: mm q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 300 300 5 100 70 1 .

2SA1858 Features

* 0.45

* 0.1 +0.15 2.3±0.2 W ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base TO

* 92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collec

2SA1858_PanasonicSemiconductor.pdf