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2SB0929 - Power Transistors

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Overview

Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.

Key Features

  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 3.
  • 5 35 1.3 1.

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