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2SB1030A Datasheet

Silicon PNP epitaxial planer type Transistor

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Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SB1030
base voltage 2SB1030A
Collector to 2SB1030
emitter voltage 2SB1030A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SB1030
voltage
2SB1030A
Collector to emitter 2SB1030
voltage
2SB1030A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
min typ max Unit
– 0.1 µA
–1 µA
–30
V
–60
–25
V
–50
–7 V
85 340
40
– 0.35 – 0.6
V
200 MHz
6 15 pF
*2 Pulse measurement
1


Panasonic Electronic Components Datasheet

2SB1030A Datasheet

Silicon PNP epitaxial planer type Transistor

No Preview Available !

Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
20
IE=0
18 f=1MHz
Ta=25˚C
16
14
12
10
8
6
4
2
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–1200
–1000
IC — VCE
Ta=25˚C
–800
–600
–400
–200
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1030, 2SB1030A
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
600
VCE=–10V
500
400
300
Ta=75˚C
200 25˚C
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
NV — IC
240
VCE=–10V
Ta=25˚C
Function=FLAT
200
160
120
80 Rg=100k
22k
40
4.7k
0
–10 –30 –100 –300 –1000
Collector current IC (µA)
fT — IE
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2


Part Number 2SB1030A
Description Silicon PNP epitaxial planer type Transistor
Maker Panasonic Semiconductor
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2SB1030A Datasheet PDF






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