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2SB1606 - Silicon PNP Transistor

Key Features

  • q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (Ta=25˚C) Ratings.
  • 130.
  • 80.
  • 7.
  • 10.
  • 5 40 2 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collect.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (Ta=25˚C) Ratings –130 –80 –7 –10 –5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 15.0±0.3 3.0±0.