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Panasonic Electronic Components Datasheet

2SC4835 Datasheet

Silicon NPN Transistor

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Transistor
2SC4835
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
2
80
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3M
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
ICBO
IEBO
VCBO
VCEO
hFE
fT
VCB = 10V, IE = 0
1 µA
VEB = 2V, IC = 0
1 µA
IC = 10µA, IE = 0
15
V
IC = 100µA, IB = 0
10
V
VCE = 8V, IC = 20mA*
50 150 200
VCE = 8V, IC = 15mA, f = 800MHz
5
6
GHz
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Cob
| S21e |2
GUM
VCB = 10V, IE = 0, f = 1MHz
0.7 1.2 pF
VCE = 8V, IC = 15mA, f = 800MHz 11 14
dB
VCE = 8V, IC = 15mA, f = 800MHz 15 dB
Noise figure
NF VCE = 8V, IC = 7mA, f = 800MHz
1.3 2 dB
* Pulse measurement
1


Panasonic Electronic Components Datasheet

2SC4835 Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1 Ta=75˚C
25˚C
–25˚C
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
2.4
IE=0
f=1MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
24
Ta=25˚C
20 IB=200µA
180µA
160µA
16 140µA
120µA
12
100µA
8 80µA
60µA
4 40µA
20µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
600
VCE=8V
500
400
Ta=75˚C
300
25˚C
200
–25˚C
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
GUM — IC
24
VCE=8V
f=800MHz
Ta=25˚C
20
16
12
8
4
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2SC4835
IC — VBE
120
VCE=8V
100
25˚C
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IC
12
VCE=8V
f=800MHz
Ta=25˚C
10
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NF — IC
12
VCE=8V
(Rg=50)
10 f=800MHz
Ta=25˚C
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2


Part Number 2SC4835
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
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2SC4835 Datasheet PDF






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