* 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emit
2SD1261
Panasonic Semiconductor
64.61 KB
Silicon pnp transistor.
Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A 1.
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