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2SD1478A Datasheet

Silicon NPN Transistor

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Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 20000.
q A shunt resistor is omitted from the driver.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD1478
base voltage 2SD1478A
Collector to 2SD1478
emitter voltage 2SD1478A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2N(2SD1478)
2O(2SD1478A)
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base 2SD1478
voltage
2SD1478A
ICBO
IEBO
VCBO
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
Collector to emitter 2SD1478
voltage
VCEO
2SD1478A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
IC = 1mA, IB = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA*2
IC = 500mA, IB = 0.5mA*2
IC = 500mA, IB = 0.5mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE1 Rank classification
Rank
QR
hFE1 4000 ~ 10000 8000 ~ 20000
Marking 2SD1478
2NQ
2NR
Symbol 2SD1478A 2OQ
2OR
min
30
60
25
50
5
4000
E
typ max Unit
100 nA
100 nA
V
V
V
20000
2.5 V
3.0 V
200 MHz
*2 Pulse measurement
1


Panasonic Electronic Components Datasheet

2SD1478A Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
PC — Ta
240
200
160
120
80
40
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=1000
30
10
25˚C
3
Ta=–25˚C
1 75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
30
10
3
1
IC — VCE
Ta=25˚C
IB=50µA
45µA
40µA
35µA
30µA
25µA
20µA
15µA
10µA
0.3 5µA
0.1
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
hFE — IC
105
VCE=10V
Ta=75˚C
104 25˚C
–25˚C
103
102
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
2SD1478, 2SD1478A
VCE(sat) — IC
100
IC/IB=1000
30
10
3
25˚C Ta=75˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
1
3
10 30
100
Collector to base voltage VCB (V)
2


Part Number 2SD1478A
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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