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2SD1485 - Silicon NPN Transistor

Features

  • 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP.
  • 3 Full Pack Package(a) s Electrical Characteristics Pa.

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Datasheet Details

Part number 2SD1485
Manufacturer Panasonic
File Size 44.75 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1485 Datasheet
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Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

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Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 100 100 5 8 5 60 3 150 –55 to +155 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.
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