* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package
* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open)
2SD2573
Panasonic Semiconductor
109.74 KB
Silicon npn triple diffusion planar type transistor.
Power Transistors 2SD2573 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high current amplification, power amplification 7.5±0.2 .
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