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Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638 and 2SD639
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.0±0.1
0.85
Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150
Unit
0.55±0.1
0.45±0.05
1.25±0.05
V
3 2 1
emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package
2.5 2.
2SD639 Datasheet
