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Panasonic Electronic Components Datasheet

2SD662 Datasheet

Silicon NPN Transistor

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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
Features
High collector-emitter voltage (Base open) VCEO
High transition frequency fT
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SD0662 VCBO
2SD0662B
250
400
Collector-emitter voltage 2SD0662 VCEO
(Base open)
2SD0662B
200
400
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
PC
Tj
Tstg
5
70
600
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
321
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SD0662 VCEO
2SD0662B
IC = 100 µA, IB = 0
200
400
V
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICEO
hFE *
VCE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCE = 100 V, IB = 0
VCE = 10 V, IC = 5 mA
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
30
50
V
2 µA
220
1.2 V
MHz
10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150
100 to 220
Publication date: November 2002
Note) The part numbers in the parenthesis show conventional part number.
SJC00195BED
1


Panasonic Electronic Components Datasheet

2SD662 Datasheet

Silicon NPN Transistor

No Preview Available !

www.DataSheet4U.net
2SD0662, 2SD0662B
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
120
Ta = 25°C
100
1.8 mA
1.6 mA
IB = 2.0 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
80
60 0.6 mA
0.4 mA
40
0.2 mA
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
120
VCE = 10 V
25°C
100
Ta = 75°C 25°C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
IC IB
120
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base current IB (mA)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1 25°C
0.01
0.01
0.1
1
Collector current IC (mA)
10
IB VBE
3.0
VCE = 10 V
Ta = 25°C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
hFE IC
360
VCE = 10 V
300
240
Ta = 75°C
180
25°C
120 25°C
60
0
0.01 0.1
1
Collector current IC (mA)
10
fT IE
160
VCB = 10 V
Ta = 25°C
140
120
100
80
60
40
20
0
1 10 100
Emitter current IE (mA)
ICBO Ta
104 VCB = 250 V
103
102
10
1
0 40 80 120 160 200
Ambient temperature Ta (°C)
2 SJC00195BED


Part Number 2SD662
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
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2SD662 Datasheet PDF






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