q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 40 20 7 8 5 0.75 150.
55 ~ +150 Unit V V V A A W ˚C ˚C
2.54±0.15 1 2 3 0.45.
0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at.
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Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 40 20 7 8 5 0.75 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
2.54±0.15 1 2 3 0.45 –0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
0.45 –0.1
1.27
+0.2
2.3±0.
2SD965 Datasheet
