silicon n-channel power f-mos fet.
q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 .
4.1±0.2 8.0±0.2 Solder Dip
13.7
–0.2
q Contactless relay q Diving circuit for a solenoid q Driving circ.
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