2SK3030 fet equivalent, silicon n-channel power f-mos fet.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Co.
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source b.
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