q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Co
✔ 2SK3037 Application
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain
2SK303, Kexin
SMD Type
Junction FET
N-Channel Junction Silicon FET 2SK303
Features
Ideal for potentiometers, analog switches, low frequency amplifiers, constant c.
2SK3030, Panasonic Semiconductor
Power F-MOS FETs
2SK3030 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3031, Panasonic Semiconductor
This product plies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3031
Silicon N-channel power MOSFET
■ Features
Unit: mm
• Avalanc.
2SK3032, Panasonic Semiconductor
Power F-MOS FETs
2SK3032 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3033, Panasonic Semiconductor
Power F-MOS FETs
2SK3033 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3034, Panasonic Semiconductor
Power F-MOS FETs
2SK3034 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
