2SK3034 Datasheet - Panasonic Semiconductor

2SK3034, Silicon N-Channel Power F-MOS FET

Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s

Features

* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7
* 0.2 q Contactless relay q Diving circuit for a so

Applications

* +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 100 ±20 ±40 ±80 80 60 2 150
* 55 t

2SK3034_PanasonicSemiconductor.pdf