2SK3030 Silicon N-Channel Power F-MOS FET

Panasonic Semiconductor

Description

Power F-MOS FETs 2SK3030 (Tentative) Silicon N-Channel Power F-MOS FET s .

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Datasheet Specifications

Part number: 2SK3030
Manufacturer: Panasonic Semiconductor
File Size: 24.20 KB
Datasheet: 2SK3030_PanasonicSemiconductor.pdf
Description: Silicon N-Channel Power F-MOS FET

Features

* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1

Applications

* 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 100 ±20 ±8 ±16 3.2 10 1 150
* 55 to +150 Unit V V A A mJ

2SK3030 Distributors

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2SK3030 Silicon N-Channel Power F-MOS FET Panasonic Semiconductor

Panasonic Semiconductor 2SK3030-like datasheet