The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
www.DataSheCeto4lUle.cctoorm-base voltage 2SD1266 VCBO
60
V
(Emitter open)
2SD1266A
80
Collector-emitter voltage 2SD1266 VCEO
60
V
(Base open)
2SD1266A
80
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power
TC = 25°C PC
35
W
dissipation
2.