q q q
7.5±0.2 Solder Dip 4.0 14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 2 150.
55 to +150 Unit V
emitter voltage 2SD1267A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
16.7±0.3
High forward current transfer ratio hFE whi.
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D1267. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2...
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Complementary to 2SB942 and 2SB942A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150 Unit V emitter voltage 2SD1267A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.
D1267 Datasheet
