LNA2901L - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LNA2901L
Manufacturer	Panasonic Semiconductor
File Size	40.43 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2901L_PanasonicSemiconductor.pdf
Additional preview pages of the LNA2901L datasheet.

High-power output, high-efficiency : Ie = 9 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 160 50 1 3.
25 to +85.
40 to +100 Unit mW mA A V ˚C ˚C ø6.0±0.2 A.

📁 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |