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Infrared Light Emitting Diodes
LNA2901L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0.15 2.54
For optical control systems Features
High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type
26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0
ø5.0±0.2
Transparent epoxy resin package
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 160 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
ø6.0±0.2
Absolute Maximum Ratings (Ta = 25˚C)
2
1 1: Cathode 2: Anode
f = 100 Hz, Duty cycle = 0.
LNA2901L Datasheet
