LNA2901L
LNA2901L is GaAs Infrared Light Emitting Diode manufactured by Panasonic.
Features
High-power output, high-efficiency : Ie = 9 m W/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type
26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0
ø5.0±0.2
Transparent epoxy resin package
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
- Symbol PD IF IFP- VR Topr Tstg
Ratings 160 50 1 3
- 25 to +85
- 40 to +100
Unit m W m A A V ˚C ˚C
ø6.0±0.2
Absolute Maximum Ratings (Ta = 25˚C)
1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Center radiant intensity Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Pulse forward voltage Reverse current (DC) Capacitance between terminals Half-power angle
- Symbol Ie PO λP ∆λ VF VFP- IR Ct θ
Conditions IF = 50m A IF = 50m A IF = 50m A IF = 50m A IF = 50m A IFP = 1A VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50% min 9 typ 12 950 50 1.3
0.6±0.15 max
Unit m W/sr m W nm nm
1.5 3 10
V V µA p F deg.
35 20 f = 100 Hz, Duty cycle = 0.1 %
Infrared Light Emitting Diodes
- Ta
60 10 2
- Duty cycle tw = 10µs Ta = 25˚C 80 70
- VF
Ta = 25˚C
IF (m A)
IFP (A)
IF (m A) Forward current
1 10 10...
