MSG36E41 - SiGe HBT type

Panasonic

Datasheet Details

Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier.

s.
Compatible between high breakdown voltage and high cut-off frequency.
Low noise, high-gain amplification.
Two elements incorporated into one package (Each transistor is separated).
Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02.
MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05.
Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Coll.