MSG36E41 Description
Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier.
MSG36E41 Key Features
- patible between high breakdown voltage and high cut-off frequency
- Low noise, high-gain amplification
- Two elements incorporated into one package (Each transistor is separated)
- Reduction of the mounting area and assembly cost by one half
- MSG33004 + MSG33001