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Panasonic Electronic Components Datasheet

UN4113 Datasheet

Silicon PNP epitaxial planer transistor

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Transistors with built-in Resistor
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q New S type package, allowing supply with the radial taping.
4.0±0.2
Unit: mm
s Resistance by Part Number
q UN4111
q UN4112
q UN4113
q UN4114
q UN4115
q UN4116
q UN4117
q UN4118
q UN4119
q UN4110
q UN411D
q UN411E
q UN411F
q UN411H
q UN411L
(R1)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
2.2k
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
R1
B
R2
C
E
1


Panasonic Electronic Components Datasheet

UN4113 Datasheet

Silicon PNP epitaxial planer transistor

No Preview Available !

UN4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
4119/4110/411D/411E/411F/411H/411L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN4111
ICBO VCB = –50V, IE = 0
ICEO VCE = –50V, IB = 0
UN4112/4114/411E/411D
Emitter
cutoff
current
UN4113
UN4115/4116/4117/4110
UN411F/411H
IEBO
VEB = –6V, IC = 0
UN4119
UN4118/411L
Collector to base voltage
Collector to emitter voltage
UN4111
VCBO
VCEO
IC = –10µA, IE = 0
IC = –2mA, IB = 0
–50
–50
35
Forward
current
transfer
ratio
UN4112/411E
UN4113/4114
hFE
UN4115*/4116*/4117*/4110*
UN411F/411D/4119/411H
VCE = –10V, IC = –5mA
60
80
160
30
UN4118/411L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN4113
VOL
UN411D
UN411E
Transition frequency
UN4111/4114/4115
fT
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCC = –5V, VB = –3.5V, RL = 1k
VCC = –5V, VB = –10V, RL = 1k
VCC = 5V, VB = –6V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
UN4112/4117
Input
resis-
tance
UN4113/4110/411D/411E
UN4116/411F/411L
UN4118
UN4119
R1
(–30%)
UN411H
UN4111/4112/4113/411L
0.8
UN4114
0.17
Resis-
tance
ratio
UN4118/4119
UN411D
UN411E
R1/R2
0.08
3.7
1.7
UN411F
0.37
UN411H
0.17
typ max Unit
– 0.1 µA
– 0.5 µA
– 0.5
– 0.2
– 0.1
– 0.01 mA
–1.0
–1.5
–2.0
V
V
460
– 0.25 V
V
– 0.2
– 0.2
– 0.2
V
– 0.2
80 MHz
10
22
47
4.7 (+30%) k
0.51
1
2.2
1.0 1.2
0.21 0.25
0.1 0.12
4.7 5.7
2.14 2.6
0.47 0.57
0.22 0.27
* hFE rank classification (UN4115/4116/4117/4110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2


Part Number UN4113
Description Silicon PNP epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 13 Pages
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