UN4124 transistor equivalent, silicon pnp epitaxial planer transistor.
4.0±0.2
Unit: mm
C
B
R2
E
1
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
s Electrical Characteristics
Parameter Collector cutoff current UN.
br> –10000 f=1MHz IE=0 Ta=25˚C
–3000
IO — VIN
VO=
–5V Ta=25˚C
 .
p;–25˚C 40
120
Ta=75˚C
–25˚C
–3
–10
–30
–100
–300
–1000
0
–1
–3
–10
&n.
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