0.1
I Basic Part Number of Element
G
2SD1915F × 2 elements
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 50 20 25 300 500 300 150.
55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Collecto.
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Composite Transistors
XN01504 (XN1504)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3
0.16+0.10 –0.06
I Features
G G
10˚ 1.1+0.2 –0.1 1.1+0.3 –0.
XN01504 Datasheet
