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Panasonic Electronic Components Datasheet

XN04501 Datasheet

Silicon NPN epitaxial planar type

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Composite Transistors
XN04501 (XN4501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A) × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
60
50
7
Collector current
IC 100
Peak collector current
ICP 200
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5H
Internal Connection
45
6
Tr2 Tr1
321
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00075BED
1


Panasonic Electronic Components Datasheet

XN04501 Datasheet

Silicon NPN epitaxial planar type

No Preview Available !

XN04501
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
60
Ta = 25°C
IB = 160 µA
50
140 µA
40 120 µA
100 µA
30
80 µA
20 60 µA
40 µA
10
20 µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
240
VCE = 10 V
Ta = 25°C
200
IC IB
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
IB VBE
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
IC VBE
240
VCE = 10 V
200
160
120 25°C
Ta = 75°C
80
25°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
102
IC / IB = 10
10
1
101
25°C
Ta = 75°C
25°C
102
101
1 10
Collector current IC (mA)
102
hFE IC
600
VCE = 10 V
500
400 Ta = 75°C
25°C
300 25°C
200
100
0
101 1
10 102
Collector current IC (mA)
fT IE
300
VCB = 10 V
Ta = 25°C
240
180
120
60
0
101
–1 –10
Emitter current IE (mA)
–102
NV IC
240
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
120 Rg = 100 k
80 22 k
40 4.7 k
0
10 102 103
Collector current IC (µA)
2 SJJ00075BED


Part Number XN04501
Description Silicon NPN epitaxial planar type
Maker Panasonic Semiconductor
Total Page 3 Pages
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