* 1 Composite Transistors PT
* Ta 500 XN1116 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE
* 160 VCE(sat)
* IC
* 100 hFE
* IC IC/IB=10 400 VCE=
* 10V Collector current IC (mA)
XN1116
Panasonic Semiconductor
33.24 KB
Silicon pnp epitaxial planer transistor.
Composite Transistors XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.
📁 Related Datasheet
XN1110 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1111 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1112 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1113 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1114 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1115 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1117 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1118 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1119 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN111F Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
