* 1 Composite Transistors PT
* Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 240
* 10 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE
XN111M
Panasonic Semiconductor
34.13 KB
Pnp epitaxial planer transistor.
Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.6.
📁 Related Datasheet
XN1110 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1111 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1112 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1113 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1114 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1115 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1116 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1117 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1118 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1119 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
