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Panasonic Electronic Components Datasheet

XN1C301 Datasheet

Silicon PNP(NPN) epitaxial planer transistor

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Composite Transistors
XN1C301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
s Features
q Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
+0.2
2.8 -0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SB709A+2SD601A
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Tr1 Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2 Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
–60
–50
–7
–100
–200
60
50
7
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Base (Tr1)
Emitter (Tr2)
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 4R
Internal Connection
Tr1
5
1
4
32
Tr2
1


Panasonic Electronic Components Datasheet

XN1C301 Datasheet

Silicon PNP(NPN) epitaxial planer transistor

No Preview Available !

Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
XN1C301
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
60
50
7
160
typ max Unit
V
V
V
0.1 µA
100 µA
460
0.1 0.3
V
150 MHz
3.5 pF
2


Part Number XN1C301
Description Silicon PNP(NPN) epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 5 Pages
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