* 1 Composite Transistors PT
* Ta 500 2.5 Ta=25˚C XN1D873 ID
* VDS 2.5 ID
* VGS Total power dissipation PT (mW) 400 2.0 2.0 VGS=0V Drain current ID (mA) Drain current ID (mA) Ta=
* 25˚C 1.5 25˚C 300 1.5
* 0.1V
* 0.2V 1.0
* 0.3V
XN1D873
Panasonic Semiconductor
29.96 KB
Silicon n-channel junction fet.
Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 .
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