* 1 Composite Transistors PT
* Ta 500 XN2212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 160 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter s
XN2212
Panasonic Semiconductor
33.86 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.
📁 Related Datasheet
XN2210 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN2211 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN2215 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN2216 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN2115 40V / 1.5A high dimming ratio LED constant current driver (Innuovo SEMI)
XN2401 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN2501 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN2531 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN297 2.4G high-speed single-chip wireless transceiver chip (PANCHIP)
XN01110 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
