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Panasonic Electronic Components Datasheet

XN4404 Datasheet

Silicon PNP epitaxial planer transistor

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Composite Transistors
XN4404
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SB970 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
–15
–10
–7
– 0.5
–1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: CV
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–15
V
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
VCEO
VEBO
ICBO
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCB = –10V, IE = 0
–10 V
–7 V
– 0.1 µA
Forward current transfer ratio
hFE1
hFE2
VCE = –2V, IC = –500mA*
VCE = –2V, IC = –1A*
100
60
350
Collector to emitter saturation voltage VCE(sat)
IC = –400mA, IB = –8mA*
– 0.16 – 0.3
V
Base to emitter saturation voltage VBE(sat)
IC = –400mA, IB = –8mA*
–0.8 –1.2
V
Transition frequency
fT VCB = –10V, IE = 50mA, f = 200MHz 130 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
22 pF
*Pulse measurement
1


Panasonic Electronic Components Datasheet

XN4404 Datasheet

Silicon PNP epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB= –10mA
– 9mA
– 8mA
– 7mA
– 6mA
– 5mA
– 4mA
– 3mA
– 2mA
–1mA
0
0 –1 –2 –3 –4 –5 –6
Collector to emitter voltage VCE (V)
XN4404
–100
– 30
–10
VBE(sat) — IC
IC/IB=50
–3
–1
– 0.3
– 0.1
25˚C
Ta=– 25˚C
75˚C
– 0.03
– 0.01
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Collector current IC (A)
–100
– 30
–10
VCE(sat) — IC
IC/IB=50
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Collector current IC (A)
hFE — IC
600
VCE= – 2V
500
400
Ta=75˚C
25˚C
300
– 25˚C
200
100
0
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Collector current IC (A)
fT — IE
200 VCB=–10V
Ta=25˚C
160
120
80
40
0
1 2 3 5 10 20 30 50 100
Emitter current IE (mA)
Cob — VCB
80
f=1MHz
70 IE=0
Ta=25˚C
60
50
40
30
20
10
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
2


Part Number XN4404
Description Silicon PNP epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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