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Panasonic Electronic Components Datasheet

XN4609 Datasheet

Silicon NPN(PNP) epitaxial planer transistor

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Composite Transistors
XN4609
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For amplification of low frequency output (Tr1)
For general amplification (Tr2)
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SD1328+2SB709A
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Tr1 Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2 Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
25
20
12
0.5
1
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
A
A
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5F
Internal Connection
Tr1
6
1
52
43
Tr2
1


Panasonic Electronic Components Datasheet

XN4609 Datasheet

Silicon NPN(PNP) epitaxial planer transistor

No Preview Available !

Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Ron*2
Conditions
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 25V, IE = 0
VCE = 2V, IC = 0.5A*1
VCE = 2V, IC = 1A*1
IC = 0.5A, IB = 20mA
IC = 0.5A, IB = 20mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
25
20
12
200
60
XN4609
typ max Unit
V
V
V
0.1 µA
800
0.13 0.4
V
1.2 V
200 MHz
10 pF
1.0
q Tr2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Pulse measurement
*2 Ron test circuit
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IE = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
IB=1mA
1k
VB VA
VV
Ron=
VB
VA–VB
!1000()
f=1kHz
V=0.3V
min
–60
–50
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
Unit
V
V
V
µA
µA
V
MHz
pF
2


Part Number XN4609
Description Silicon NPN(PNP) epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 5 Pages
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