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Peregrine Semiconductor

PE42672 Datasheet Preview

PE42672 Datasheet

SP7T UltraCMOS

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Figure 1. Functional Diagram
WCDMA
TX1
GSM/EDGE TX2
GSM/EDGE TX3
CMOS
Control/Driver
and ESD
V1 V2 V3
Figure 2. Die Top View*
RX1
RX2
RX3
RX4
TX1
GND
TX2
GND
TX3
GND
GND VDD
ANT RX1
GND
RX2
GND
RX3
GND
RX4
GND
V3 GN V2 V1 GND
1006 µm
* Dimensions shown are drawn die size.
Document No. 70-0197-01 www.psemi.com
Contact sales@psemi.com for full version of datasheet
Advance Information
PE42672 DIE
SP7T UltraCMOS™ 2.75 V Switch
100 – 3000 MHz, +68 dBM IIP3
Features
Dedicated TX1 port for WCDMA, TX2
and TX3 ports for GSM/EDGE
Three pin CMOS logic control with
integral decoder/driver
Exceptional harmonic performance:
2fo = -84 dBc and 3fo = -77 dBc
Low TX insertion loss: 0.50 dB at
900 MHz, 0.70 dB at 1900 MHz
TX – RX Isolation of 44 dB at 900 MHz,
38 dB at 1900 MHz
1500 V HBM ESD tolerance all ports
+68 dBm IIP3
-111 dBm IMD3
No blocking capacitors required
Product Description
The PE42672 is a HaRP™-enhanced SP7T
RF Switch developed on the UltraCMOS™
process technology. It addresses the specific
design needs of the Quad-Band GSM Handset
Antenna Switch Module Market for use in
GSM/EDGE/PCS/DCS/WCDMA handsets.
The switch is comprised of three TX ports and
four RX ports. TX1 is designed for WCDMA
and TX2 and TX3 are designed for GSM/
EDGE. The four symmetric RX ports can be
used for GSM/EDGE/PCS RX. On-chip CMOS
decoder logic facilitates three-pin low voltage
CMOS control, while high ESD tolerance of
1500 V at all ports, no blocking capacitor
requirements, and on-chip SAW filter over-
voltage protection devices make this the
ultimate in integration and ruggedness.
Peregrine’s HaRP™ technology
enhancements deliver high linearity and
exceptional harmonics performance. It is an
innovative feature of the UltraCMOS™
process, providing performance superior to
GaAs with the economy and integration of
conventional CMOS.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 4




Peregrine Semiconductor

PE42672 Datasheet Preview

PE42672 Datasheet

SP7T UltraCMOS

No Preview Available !

PE42672
Advance Information
Table 1. Target Electrical Specifications @ 25 °C, VDD = 2.75 V
Parameter
Condition
Insertion loss1
TX - Ant (850 / 900)
TX - Ant (1800 / 1900)
TX - Ant ( 2200 UMTS )
RX - Ant (850 / 900)
RX - Ant (1800 / 1900)
Return Loss
Port under test in on state
Isolation
TX - RX (850 / 900)
TX - RX (1800 / 1900)
TX - TX (850 / 900)
TX - TX (1800 / 1900)
TX1 - RX (1900 / 2200)
2nd Harmonic
TX 850 / 900 MHz, +35 dBm output power, 50
TX 1800 / 1900 MHz, +33 dBm output power, 50
3rd Harmonic
TX 850 / 900 MHz, +35 dBm output power, 50
TX 1800 / 1900 MHz, +33 dBm output power, 50
IMD3 distortion at 2.14 GHz
TX1 Measured at 2.14 GHz at Ant port, input +20 dBm CW signal
at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
Note: 1. Insertion loss specified with optimal impedance matching.
Typ
0.5
0.7
0.8
0.8
1.0
20
44
38
29
23
37
-84
-80
-77
-73
-111
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dBm
Table 2. Operating Ranges
Parameter
Symbol Min Typ Max Units
Temperature range
TOP -40
+85 °C
VDD Supply Voltage
VDD 2.65 2.75 2.85 V
IDD Power Supply Current
(VDD = 2.75 V)
TX input power2
(VSWR 3:1)
RX input power2
(VSWR =1:1)
IDD
PIN
PIN
13 50 µA
+35 dBm
+20 dBm
Control Voltage High
VIH 1.4
V
Control Voltage Low
VIL
0.4 V
Note: 2. Assumes RF input period of 4620 µs and duty cycle of 50%.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 4
Table 3. Absolute Maximum Ratings
Symbol
Parameter/Conditions
Min Max Units
VDD Power supply voltage
-0.3 4.0
V
VI Voltage on any input
-0.3 VDD+ 0.3 V
TST Storage temperature range
TX input power (50 ) 3,4
PIN(50 )
RX input power (50 ) 3,4
PIN (:1) TX input power (VSWR = :1) 3,4
-65
+150
+38
+23
+35
°C
dBm
dBm
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
VESD
ESD Voltage at ANT Port
(IEC 61000-4-2)
1500
V
1700
V
Note: 3. Assumes RF input period of 4620 µs and duty cycle of 50%.
4. VDD within operating range specified in Table 2.
Part performance is not guaranteed under these
conditions. Exposure to absolute maximum
conditions for extended periods of time may
adversely affect reliability. Stresses in excess of
absolute maximum ratings may cause permanent
damage.
Document No. 70-0197-01 UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet


Part Number PE42672
Description SP7T UltraCMOS
Maker Peregrine Semiconductor
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