2N2484 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 50 m A) - Low voltage (max. 60 V) APPLICATIONS - General purpose switching and amplification - High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. Fig.1 handbook, halfpage 1 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION 3 2 MAM264 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain Tamb ≤ 25 °C IC = 10 µA; VCE = 5 V IC = 1 m A; VCE = 5 V IC = 10 m A; VCE = 5 V f T transition frequency open base CONDITIONS open emitter - - - - 100 250 - MIN. - - - - - - - 80 TYP. MAX. 60 60 100 360 500 - 800 - MHz V V m A m W UNIT IC = 0.5 m A; VCE = 5 V; f = 100 MHz 60 1997 May 01 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 60 60 6 50 100 50 360 +150 200 +150 V V V UNIT m A m A m A m W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case VALUE 480 150 UNIT K/W K/W 1997 May...