BLF1820-40 - UHF power LDMOS transistor

Product Overview

Philips

Datasheet Details

Part number	BLF1820-40
Manufacturer	Philips
File Size	155.40 KB
Description	UHF power LDMOS transistor
Datasheet	BLF1820-40 Datasheet
Additional preview pages of the BLF1820-40 datasheet.

Product details

Description

drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap.The common source is connected to the mounting flange.Fig.1 Simplified outline SOT608A.QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.MODE OF OPERATION f (MHz) VDS PL Gp ηD dim (V) (W) (dB) (%) (dBc) Two-tone, class-AB f1 = 2000; f2 = 2000.1

Features

High power gain.
Easy power control.
Excellent ruggedness.
Designed for broadband operation (1.8 to 2 GHz).
Internal input and output matching for high gain and efficiency.
Improved linearity at backoff levels.

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Published: Mar 22, 2015 |