BLF1820-90 Description
drain gate source, connected to flange handbook, halfpage 1 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLF1820-90 Key Features
- Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA
- Output power = 90 W (PEP)
- Gain = 12 dB
- Efficiency = 32%
- dim = -26 dBc
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (1800 to 2000 MHz)
BLF1820-90 Applications
- RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range