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BLF1820-90 Datasheet Uhf Power Ldmos Transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors UHF power LDMOS transistor Product.

General Description

drain gate source, connected to flange handbook, halfpage 1 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.

Key Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
  • Output power = 90 W (PEP).
  • Gain = 12 dB.
  • Efficiency = 32%.
  • dim =.
  • 26 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (1800 to 2000 MHz).
  • Internally matched for ease of use.

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLF1820-40 UHF power LDMOS transistor
BLF2043F UHF power LDMOS transistor
BLF2047L-90 UHF power LDMOS transistor

BLF1820-90 Distributor