BLF2047L-90 Description
drain gate source, connected to flange 1 23 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The mon source is connected to the mounting flange. Top view MBK394 Fig.1 Simplified outline SOT502A.
BLF2047L-90 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing
- Designed for broadband operation (1.8 to 2.0 GHz)
- Internal input and output matching for high gain and
BLF2047L-90 Applications
- mon source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range