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BLF2047L-90 - UHF power LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap.

The common source is connected to the mounting flange.

Fig.1 Simplified outline SOT502A.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (1.8 to 2.0 GHz).
  • Internal input and output matching for high gain and efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L/90 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 17 2000 Mar 06 Philips Semiconductors UHF power LDMOS transistor Product specification BLF2047L/90 FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.0 GHz) • Internal input and output matching for high gain and efficiency. APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range.