BLF1820-40 Description
drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The mon source is connected to the mounting flange. Fig.1 Simplified outline SOT608A.
BLF1820-40 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Designed for broadband operation (1.8 to 2 GHz)
- Internal input and output matching for high gain and
- Improved linearity at backoff levels
BLF1820-40 Applications
- mon source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range
- Suitable for GSM, Edge, CDMA and WCDMA applications