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BLF1820-40 - UHF power LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap.

The common source is connected to the mounting flange.

Fig.1 Simplified outline SOT608A.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Designed for broadband operation (1.8 to 2 GHz).
  • Internal input and output matching for high gain and efficiency.
  • Improved linearity at backoff levels.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF1820-40 UHF power LDMOS transistor Preliminary specification 2001 Aug 10 Philips Semiconductors UHF power LDMOS transistor Preliminary specification BLF1820-40 FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range • Suitable for GSM, Edge, CDMA and WCDMA applications.