BLF1820-90 Datasheet UHF power LDMOS transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

BLF1820-90 uhf power ldmos transistor by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	BLF1820-90
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	100.77 KB
Description	UHF power LDMOS transistor
Download	BLF1820-90 Download (PDF)

General Description

drain gate source, connected to ﬂange handbook, halfpage 1 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product speciﬁcation Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors UHF power LDMOS transistor Product.

Key Features

Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
Output power = 90 W (PEP).
Gain = 12 dB.
Efficiency = 32%.
dim =.
26 dBc.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for broadband operation (1800 to 2000 MHz).
Internally matched for ease of use.

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