BLF1820-90 transistor equivalent, uhf power ldmos transistor.
* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
– Output power = 90 W (PEP)
– Gain = 12 dB
.
* RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz fre.
drain gate source, connected to flange
handbook, halfpage
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Top view
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MBK394
Fig.1 Simplified outline SOT502A.
DESCRIPTION
90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.
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