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Philips

BLF1820-90 Datasheet Preview

BLF1820-90 Datasheet

UHF power LDMOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF1820-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Mar 07
2003 Feb 10




Philips

BLF1820-90 Datasheet Preview

BLF1820-90 Datasheet

UHF power LDMOS transistor

No Preview Available !

Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF1820-90
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA:
– Output power = 90 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim = 26 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (1800 to 2000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
PINNING
PIN
1
2
3
DESCRIPTION
drain
gate
source, connected to flange
handbook, halfpage
1
Top view
2
3
MBK394
Fig.1 Simplified outline SOT502A.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
PL
(W)
90 (PEP)
Gp
(dB)
>11
ηD dim
(%) (dBc)
>30 ≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS
VGS
ID
Tstg
Tj
SYMBOL
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
PARAMETER
MIN.
65
MAX.
65
±15
12
+150
200
UNIT
V
V
A
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10
2


Part Number BLF1820-90
Description UHF power LDMOS transistor
Maker Philips
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