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BLF1820-90 - UHF power LDMOS transistor

Datasheet Summary

Description

Fig.1 Simplified outline SOT502A.

90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
  • Output power = 90 W (PEP).
  • Gain = 12 dB.
  • Efficiency = 32%.
  • dim =.
  • 26 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (1800 to 2000 MHz).
  • Internally matched for ease of use.

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Datasheet preview – BLF1820-90

Datasheet Details

Part number BLF1820-90
Manufacturer Philips
File Size 100.77 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1820-90 Datasheet
Additional preview pages of the BLF1820-90 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors UHF power LDMOS transistor Product specification BLF1820-90 FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 90 W (PEP) – Gain = 12 dB – Efficiency = 32% – dim = −26 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (1800 to 2000 MHz) • Internally matched for ease of use. APPLICATIONS • RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.
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