BLF1820-90 - UHF power LDMOS transistor

Philips

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Datasheet Details

Part number	BLF1820-90
Manufacturer	Philips
File Size	100.77 KB
Description	UHF power LDMOS transistor
Datasheet	BLF1820-90-Philips.pdf

BLF1820-90 Product details

Description

drain gate source, connected to ﬂange handbook, halfpage 1 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A.DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.MODE OF OPERATION f (MHz) VDS (V) 2-tone, class-AB f1 = 2000; f2 = 2000.1 26 PL (W) 90 (PEP) Gp (dB) >11 ηD dim (%) (dBc) >30 ≤ 25 LIMITING VALUES In accordance with the

Features

Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
Output power = 90 W (PEP).
Gain = 12 dB.
Efficiency = 32%.
dim =.
26 dBc.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for broadband operation (1800 to 2000 MHz).
Internally matched for ease of use.

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Published: Mar 22, 2015 |