BLF2047L-90 Datasheet | Philips Semiconductors

FEATURES - High power gain - Easy power control - Excellent ruggedness - Source on underside eliminates DC isolators, reducing mon mode inductance - Designed for broadband operation (1.8 to 2.0 GHz) - Internal input and output matching for high gain and efficiency. APPLICATIONS - mon source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. PINNING PIN 1 2 3 handbook, halfpage DESCRIPTION drain gate source, connected to flange DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The mon source is connected to the mounting flange. Top view MBK394 Fig.1 Simplified outline...