PPC5001T transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz. DESCRIPT.
3
APPLICATIONS Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package.
2 Side vie.
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