LBE2009S transistors equivalent, npn microwave power transistors.
* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold metallization
* Optimum temperature profile
* Excellent per.
* Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION
LBE2003S; LBE2009S; LCE2009S
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