PJM10H05NST Key Features
- RDS(ON) <300mΩ @ VGS=10V（Typ：200mΩ）
- VDS=100V, ID=5A
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Part: PJM10H05NST
- Manufacturer: Ping Jing
- Size: 647.81 KB
Related Ping Jing Datasheets
| Part Number | Description |
|---|---|
| PJM10H10NTE | N-Channel Enhancement Mode Power MOSFET |
| PJM10C30PA | N and P-Channel Complementary Power MOSFET |
| PJM03N10SQ | N-Channel MOSFET |
| PJM2300NSA | N-Channel MOSFET |
| PJM2305PSA | P-Channel Power MOSFET |
PJM10H05NST Description
： The PJM10H05NST uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOT-223, which accords with the RoHS standard.