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Polyfet RF Devices

L2711 Datasheet Preview

L2711 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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polyfet rf devices
L2711
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
7.0 Watts Single Ended
Package Style S02
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
80 Watts
Junction to
Case Thermal
Resistance
o
1.80 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
8.0 A
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 7.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
55
dB Idq = 0.20 A, Vds = 7.5 V, F = 500MHz
% Idq = 0.20 A, Vds = 7.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 7.5 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 0.20 mA, Vgs = 0V
2.0 mA
Vds = 7.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.20 A, Vgs = Vds
gM Forward Transconductance
1.7 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.40
Ohm
Vgs = 20V, Ids = 8.00 A
Idsat
Saturation Current
13.00
Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/10/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

L2711 Datasheet Preview

L2711 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

No Preview Available !

L2711
POUT VS PIN GRAPH
L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V
9
13
8
12
7
Pout
Gain
6 11
5
Efficiency = 55%
4
10
39
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
PIN IN WATTS
IV CURVE
L1C 1 DIE IV
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
Zin Zout
1000
100
10
1
0
100
10
1
0
CAPACITANCE VS VOLTAGE
L1C 1DIE CAPACITANCE
Ciss
Coss
Crss
5 10 15 20
VDS IN VOLTS
ID & GM VS VGS
L1C 1 DIE ID, GM vs VG
25
30
ID
G
M
2 4 V6 gs in Volt8s 10 12
PACKAGE DIMENSIONS IN INCHES
14
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/10/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number L2711
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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