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Polyfet RF Devices

L2821 Datasheet Preview

L2821 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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polyfet rf devices
L2821
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style S02
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
5.0 A
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 8.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
50
dB Idq = 0.20 A, Vds = 12.5 V, F = 500MHz
% Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 12.5 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
36 V Ids = 0.10 mA, Vgs = 0V
1.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
1.0 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.60
Ohm
Vgs = 20V, Ids = 3.00 A
Idsat
Saturation Current
7.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
33.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
24.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

L2821 Datasheet Preview

L2821 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

No Preview Available !

L2821
POUT VS PIN GRAPH
L2821 Pin vs Pout F=500MHZ, VDS=12.5V,Idq=.2A
12 20.00
10 18.00
16.00
8
Pout
6
Efficiency@8W=46%
14.00
12.00
4
Gain
10.00
2 8.00
0
0
0.5 1 1.5
Pin in Watts
6.00
2
IV CURVE
L2C 1 DIE IV
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
L2C1DIE CAPACITANCE
100
Ciss
10
Crss
Coss
1
0 2 4 6 8 10 12 14
VDS IN VOLTS
ID & GM VS VGS
100 L2C 1 DIE ID, GM vs VG
ID
10
1
GM
0.1
0
2
4
V6gs in Volt8s
10
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number L2821
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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